Power Integrations has announced the industry’s first 2.2 kV lateral GaN switch, under its PowiGaN portfolio. The GaN-on-sapphire device uses a d-mode cascode configuration with a low-voltage silicon ...
An exclusive look at Amperesand’s SST design, covering SiC modules, thermal engineering, redundancy, and industry standardization efforts. Similar to APEC, many vendors signaled a focus on solid-state ...
Episode 14 of the QSPICE power electronics course models supercapacitors, covering ESR, leakage, and series-cell balancing. A supercapacitor is an energy storage device with a much higher capacitance ...
The panel weighs 800V DC/DC platform trade-offs and a VPD roadmap stretching from board-mounted modules to 3D-integrated voltage regulators. Part 1 of this series covered the key takeaways from Power ...
The new 600V MOSFETs combine low switching losses, improved thermal performance and standard footprints for AI and industrial power supplies. The introduction of the new package options reflects the ...
Infineon’s 750 V CoolSiC BDS combines bidirectional power flow, rugged SiC performance and top-side-cooled packaging for power conversion. At power electronics trade shows, many companies are talking ...
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